For 35 year Cypress has been developing industry leading memory products to meet the latest customer and market needs. While our roadmap demonstrates a continued commitment to innovation and long-term support, we still offer memory products that were industry leading on one time. We still have loyal customers who love these products for long running systems but we do not recommend them for new designs. However, if you would like, we would be happy to supply them to you.
The QDR consortium defined QDR (Quadruple Data Rate) SRAM products are geared primarily to the networking and communication market.The QDR SRAMs are similar to NoBL SRAMs but with architectural enhancements such as double data rate I/Os, and dedicated read write ports.The QDR SRAMs are used in networking applications where reads and writes are balanced such as packet buffer, statistics counters, flow state, and scheduling.The QDR SRAMs have a maximum clock speed of 167MHz with a read latency of 1 cycle and are available in an industry standard 165 Ball BGA.
The QDR consortium defined DDR CIO SRAMs are similar to the legacy Synchronous Burst SRAM products but with double data rate I/Os.Like the Synchronous Burst SRAMs they are used for read intensive functions such as packet look up and packet classification in networking/communication applications.The DDR SRAMs have a maximum clock speed of 167MHz with a read latency of 1 cycle and are available in an industry standard 165 Ball BGA
The DDRII SRAMs are similar to DDR SRAMs in their operation but with some performance improvements.The DDRII SRAMs include source synchronous free running echo clocks (CQ, /CQ) that enable customers to easily capture data.The DDRII SRAMs also support 1.5V HSTL interface.The applications are the same as that of DDR SRAMs.The DDRII SRAMs have a maximum speed of 333MHz with a read latency of 1.5 cycles, with burst lengths of 2 and 4, and are available in an industry standard 165 Ball BGA.
The DDRII SIO SRAMs are similar to DDRII CIO SRAMs but they include two separate ports:即用于访问内存阵列的读端口和写端口。The read port has data outputs to support read operation and the write port has data inputs to support write operation.The DDR II SIO SRAM completely eliminates the need to "turnaround" the data bus required with common I/O devices.
The DDRII+ SRAMS are similar to DDRII+ SRAMs in their operation but with additional performance improvements.The redundant data input clocks (C & /C) are not present in the DDRII+ suite of products.Instead DDRII SRAMs include a hand shake signal (QVLD) that indicates when the Data will become valid thereby simplifying data capture.The customers also have the choice of QDRII products with programmable ODT (On Die Termination).The ODT feature turns on during a write cycle and turns off during a read cycle to save power.The DDRII+ SRAMs have a maximum speed of 550MHz with read latencies of either 2 cycles or 2.5 cycles, with a burst length of 2 and are available in an industry standard 165 Ball BGA.
赛普拉斯的高速同步 SRAM 包括标准同步流水线、No Bus Latency™ (NoBL™)、Quad Data Rate™ (QDR™) 和 Double Data Rate (DDR) SRAM，通常在网络应用中使用。赛普拉斯同步 SRAM 为诸如查找表、链接列表、队列管理、监管和数据包缓冲器等网络应用提供了理想的解决方案。赛普拉斯同步 SRAM 系列包括数百个具有不同速率、总线宽度、密度和封装的存储器。使用行业标准的引脚输出，赛普拉斯同步 SRAM 产品易于集成到新设计和现有设计中。
Cypress is a market leader in multi-port memory solutions, offering highest performance interconnects solutions in the industry.Cypress offers a wide Product portfolio of more than 300 types of Asynchronous and Synchronous Dual Ports, Quad Ports and FullFlex Dual Ports.
Cypress offers a variety of high performance and low power Inter-Processor Communication (IPC) solutions.These interconnects allow IPC between multiple processors in various applications.Our MoBL® family of Dual-Ports is specially optimized for consumer and handheld devices.