AN15979 - Soft Errors in nvSRAM | 赛普拉斯半导体
AN15979 - Soft Errors in nvSRAM
最近更新：
2017 年 7 月 21 日
版本：
*F
AN15979 describes the causes of soft error in memories and how the nvSRAM architecture, features, and packaging techniques act to reduce these soft errors.
简介
The Soft Error Rate (SER) of advanced CMOS devices is higher than all other reliability mechanisms combined together. So it becomes necessary for the high-speed memory architectures to counter the effect of soft errors. The Cypress nvSRAM with its unique architecture and special features such as Software STORE and Software RECALL can correct soft errors on the fly. This capability combined with Cypress’s intense SER test methodology makes nvSRAM one of the most reliable memory devices against the soft errors.
翻译文档仅作参考之用。我们建议您在参与设计开发时参考文档的英语版本。
相关文件
| 文件标题 | 语言 | Size | 最近更新 |
|---|---|---|---|
 AN15979 Soft Errors in nvSRAM.pdf |
英语 | 243.57 KB | 2017 年 07 月 20 日 |
|
AN15979 Soft Errors in nvSRAM (Chinese).pdf |
中文 | 364.79 KB | 2015 年 11 月 23 日 |
|
AN15979 Soft Errors in nvSRAM (Japanese).pdf |
日语 | 427.58 KB | 2015 年 11 月 23 日 |