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AN15979 - Soft Errors in nvSRAM | 赛普拉斯半导体

AN15979 - Soft Errors in nvSRAM

最近更新: 
2017 年 7 月 21 日
版本: 
*F

AN15979 describes the causes of soft error in memories and how the nvSRAM architecture, features, and packaging techniques act to reduce these soft errors.

简介

The Soft Error Rate (SER) of advanced CMOS devices is higher than all other reliability mechanisms combined together. So it becomes necessary for the high-speed memory architectures to counter the effect of soft errors. The Cypress nvSRAM with its unique architecture and special features such as Software STORE and Software RECALL can correct soft errors on the fly. This capability combined with Cypress’s intense SER test methodology makes nvSRAM one of the most reliable memory devices against the soft errors.

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