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AN202493 - Migrating from SPI nvSRAM to SPI F-RAM™ | 赛普拉斯半导体

AN202493 - Migrating from SPI nvSRAM to SPI F-RAM™

最近更新: 
2021 年 3 月 03 日
版本: 
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AN202493 provides guidelines for migrating from SPI nvSRAM to SPI F-RAM™. It recommends equivalent SPI F-RAM devices, describes package and feature differences, and discusses the hardware and firmware modifications that need to be made for a successful migration.

Introduction :

F-RAM (ferroelectric random-access memory) is a nonvolatile memory that uses a ferroelectric capacitor to store data. The data written in F-RAM is nonvolatile instantaneously. Unlike EEPROM and flash, F-RAM writes data to nonvolatile memory at bus speed.

nvSRAM is a SRAM memory with a nonvolatile element embedded in each memory cell. The embedded nonvolatile elements incorporate Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Quantum Trap technology. 

Cypress has been supporting a few SPI nvSRAM parts with the status NRND (not recommended for new designs) and is offering replacement options for these devices with its SPI F-RAM products. This application note provides details on migrating from SPI nvSRAM to SPI F-RAM. It discusses the differences in packaging, features, and timing and the modifications required in hardware and firmware to make the migration successful.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.

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