AN202493 - Migrating from SPI nvSRAM to SPI F-RAM™ | 赛普拉斯半导体
AN202493 - Migrating from SPI nvSRAM to SPI F-RAM™
AN202493 provides guidelines for migrating from SPI nvSRAM to SPI F-RAM™. It recommends equivalent SPI F-RAM devices, describes package and feature differences, and discusses the hardware and firmware modifications that need to be made for a successful migration.
F-RAM (ferroelectric random-access memory) is a nonvolatile memory that uses a ferroelectric capacitor to store data. The data written in F-RAM is nonvolatile instantaneously. Unlike EEPROM and flash, F-RAM writes data to nonvolatile memory at bus speed.
nvSRAM is a SRAM memory with a nonvolatile element embedded in each memory cell. The embedded nonvolatile elements incorporate Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Quantum Trap technology.
Cypress has been supporting a few SPI nvSRAM parts with the status NRND (not recommended for new designs) and is offering replacement options for these devices with its SPI F-RAM products. This application note provides details on migrating from SPI nvSRAM to SPI F-RAM. It discusses the differences in packaging, features, and timing and the modifications required in hardware and firmware to make the migration successful.
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