AN43380 - HSB Operation in nvSRAMs | 赛普拉斯半导体
AN43380 - HSB Operation in nvSRAMs
简介
Cypress’s nonvolatile synchronous random access memory (nvSRAM) combines the best features of SRAM and EEPROM and makes it the fastest and the most reliable nonvolatile memory. Every bit of the nvSRAM is constituted by integrating a fast SRAM and a SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) nonvolatile memory. The SRAM is read from and written to it an infinite number of times, while independent nonvolatile data resides in the nonvolatile elements.
Dear valued customer,
Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
For the full version of this message, please download the PDF version.
相关文件
| 文件标题 | 语言 | Size | 最近更新 |
|---|---|---|---|
 AN43380 HSB Operation in nvSRAMs.pdf |
英语 | 590.01 KB | 2015 年 11 月 23 日 |
|
AN43380 HSB Operation in nvSRAMs (Chinese).pdf |
中文 | 476.65 KB | 2015 年 11 月 23 日 |
|
AN43380 HSB Operation in nvSRAMs (Japanese).pdf |
日语 | 538.8 KB | 2015 年 11 月 23 日 |
Powered By OneLink