You are here

AN43380 - HSB Operation in nvSRAMs | 赛普拉斯半导体

AN43380 - HSB Operation in nvSRAMs

最近更新: 
2018 年 1 月 24 日
版本: 
*D

简介

Cypress’s nonvolatile synchronous random access memory (nvSRAM) combines the best features of SRAM and EEPROM and makes it the fastest and the most reliable nonvolatile memory. Every bit of the nvSRAM is constituted by integrating a fast SRAM and a SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) nonvolatile memory. The SRAM is read from and written to it an infinite number of times, while independent nonvolatile data resides in the nonvolatile elements.

HSB Operation in nvSRAMs Diagram (AN43380)

翻译文档仅作参考之用。我们建议您在参与设计开发时参考文档的英语版本。