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AN6068 - Replacing 4-Mbit (256K x 16) MRAM with Cypress nvSRAM | 赛普拉斯半导体

AN6068 - Replacing 4-Mbit (256K x 16) MRAM with Cypress nvSRAM

最近更新: 
2020 年 6 月 26 日
版本: 
*E

AN6068 discusses the key pinout differences between the Everspin 4-Mbit (256K x 16) MRAM and the Cypress 4-Mbit (256K x 16) nvSRAM devices. These differences should be taken into consideration when designing a PCB to use either MRAM or the high performance nvSRAM on the same footprint as true alternate source part number on the same bill of materials (BOM).

简介

Cypress offers the highest performance and most reliable nonvolatile RAM products available with its nvSRAM product line. The nvSRAM technology combines the performance characteristics of a high-speed SRAM with that of a nonvolatile memory. A similar nonvolatile solution is the Magnetoresistive RAM (MRAM) from Everspin in which magnetic polarization is used to store information. This application note discusses designing applications hardware with the option to use either MRAM or nvSRAM on the same socket without any hardware redesign.

 

Replacing 4-Mbit MRAM with nvSRAM Diagram (AN6068)

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.

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