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AN96614 - Migrating from SPI EEPROM to Cypress's SPI F-RAM™ | 赛普拉斯半导体

AN96614 - Migrating from SPI EEPROM to Cypress's SPI F-RAM™

最近更新: 
2020 年 5 月 30 日
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AN96614 provides an overview about advantages and differences to be considered when migrating from a SPI EEPROM to high-reliability and energy-efficient Cypress’s SPI F-RAM.

简介

Cypress’s F-RAM has fast random access SRAM memory cells and provides virtually infinite (1014) read/write endurance cycles, orders of magnitude higher than an EEPROM. The F-RAM performs write operations at the bus speed without incurring any write delays (NoDelay™) unlike serial EEPROMs and flash memories. Data is directly written into the F-RAM array; the next bus cycle can start immediately without checking the readiness of the device before subsequent access.

Cypress’s serial SPI F-RAM devices are available as drop-in replacements to the standard SPI EEPROM devices. This application note shows the differences between an industry-standard SPI EEPROM and Cypress’s SPI F-RAM solution. These differences need to be considered when migrating from an SPI EEPROM-based solution to Cypress’s SPI F-RAM solution.

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