3.0V GL-S Flash Memory, S29GL064S 64 Mbit Datasheet | 赛普拉斯半导体
3.0V GL-S Flash Memory, S29GL064S 64 Mbit Datasheet
- CMOS 3.0 Volt Core with Versatile I/O Architectural Advantages
- Single Power Supply Operation
- Manufactured on 65 nm MirrorBit Process Technology
- Secure Silicon
- Region – 128-word / 256-byte sector for permanent, secure identification through an 8-word / 16-byte random Electronic Serial Number, accessible through a command sequence – Programmed and locked at the factory or by the customer
- Flexible Sector Architecture – 64 Mb (uniform sector models): One hundred twenty-eight 32- kword (64-kB) sectors – 64 Mb (boot sector models): One hundred twenty-seven 32-kword (64-kB) sectors + eight 4kword (8kB) boot sectors
- Enhanced Versatile I/O Control – All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
- Compatibility with JEDEC Standards – Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection 100,000 Erase Cycles per Sector Minimum
- 20-year Data Retention Typical.
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