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CY14B101LA, CY14B101NA: 1-Mbit (128 K × 8/64 K × 16) nvSRAM | 赛普拉斯半导体

CY14B101LA, CY14B101NA: 1-Mbit (128 K × 8/64 K × 16) nvSRAM

最近更新: 
2020 年 12 月 14 日
版本: 
*S

特性

  • 20 ns、25 ns 和 45 ns 访问时间
  • Internally organized as 128 K × 8 (CY14B101LA) or 64 K × 16 (CY14B101NA)
  • 只需一个小电容,即可在断电时实现自动存储
  • 可通过软件、器件引脚或断电时自动存储 (Autostore on power-down) 触发存储至 QuantumTrap 非易失性元件
  • 可通过软件或加电触发回读至 SRAM
  • 无限的读、写和数据恢复循环
  • 1 百万次存储至量子井的循环
  • 20 年数据保留
  • Single 3 V +20% to –10% operation
  • 工业温度
  • Packages
    • 32-pin small-outline integrated circuit (SOIC)
    • 44-/54-pin thin small outline package (TSOP) Type II
    • 48-pin shrink small-outline package (SSOP)
    • 48-ball fine-pitch ball grid array (FBGA)
  • 无铅并符合有害物质限制 (RoHS)



功能描述

赛普拉斯 CY14B101LA/CY14B101NA 是一种快速静态 RAM (SRAM),且每个存储器单元中都包含非易失性元件。该存储器采用“128 K 字节,每字节 8 位”或“64 K 字,每字 16 位”的组织方式。嵌入式非易失性组件通过采用量子井技术,打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环,而独立的非易失性数据则存储在高度可靠的量子井单元中。Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.

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