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CY14B104LA, CY14B104NA: 4-Mbit (512 K × 8/256 K × 16) nvSRAM | Cypress Semiconductor

CY14B104LA, CY14B104NA: 4-Mbit (512 K × 8/256 K × 16) nvSRAM

最近更新: 
2017 年 5 月 22 日
版本: 
*O

4-Mbit (512 K × 8/256 K × 16) nvSRAM

特性

  • 20 ns、25 ns 和 45 ns 访问时间
  • Internally organized as 512K x 8 (CY14B104LA) or 256K x 16 (CY14B104NA)
  • 仅使用一个小电容器在断电时无需手动干预即可实现数据自动存储
  • 由软件、器件引脚或 AutoStore 在断电时启动数据存储至量子井非易失性组件
  • 由软件或通电操作启动数据恢复至 SRAM
  • 无限的读、写和数据恢复 循环
  • 1 百万次存储至量子井的循环
  • 20 年数据保留
  • Single 3V 20%, -10% operation
  • 工业温度
  • Packages
    • 44-/54-pin thin small outline package (TSOP) Type II
    • 48-ball fine-pitch ball grid array (FBGA)
  • 无铅并符合有害物质限制 (RoHS)
  • 如需更多信息,请参阅 PDF 文档

功能描述

The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.