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CY14B108L, CY14B108N: 8-Mbit (1024 K × 8/512 K × 16) nvSRAM | Cypress Semiconductor

CY14B108L, CY14B108N: 8-Mbit (1024 K × 8/512 K × 16) nvSRAM

最近更新: 
2017 年 5 月 10 日
版本: 
*P

特性

  • 20 ns、25 ns 和 45 ns 访问时间
  • Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16 (CY14B108N)
  • 只需一个小电容,即可在断电时实现自动存储
  • 可通过软件、器件引脚或断电时自动存储 (Autostore on power-down) 触发存储至 QuantumTrap 非易失性元件
  • 可通过软件或加电触发回读至 SRAM
  • 无限的读、写和数据恢复循环
  • 1 百万次存储至量子井的循环
  • 20 年数据保留
  • Single 3 V +20%, –10% operation
  • 工业温度
  • Packages
    • 44-/54-pin thin small outline package (TSOP) Type II
    • 48-ball fine-pitch ball grid array (FBGA)
  • 无铅并符合有害物质限制 (RoHS)

功能描述

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512 K words of 16 bits each. 嵌入式非易失性组件通过采用量子井技术,打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环,而独立的非易失性数据则存储在高度可靠的量子井单元中。Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

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