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CY14B256LA: 256-Kbit (32 K × 8) nvSRAM | Cypress Semiconductor

CY14B256LA: 256-Kbit (32 K × 8) nvSRAM

最近更新: 
2018 年 1 月 30 日
版本: 
*K

256-Kbit (32 K × 8) nvSRAM

特性

  • 25 ns 和 45 ns 访问时间
  • Internally organized as 32 K × 8 (CY14B256LA)
  • 只需一个小电容,即可在断电时实现自动存储
  • 可通过软件、器件引脚或断电时自动存储 (Autostore on power-down) 触发存储至 QuantumTrap 非易失性元件
  • 可通过软件或加电触发回读至 SRAM
  • 无限的读、写和数据恢复 循环
  • 1 百万次存储至量子井的循环
  • 20-year data retention
  • Single 3 V plus symbol icon20% to –10% operation
  • 工业温度
  • 44-pin thin small outline package (TSOP) II, 48-pin shrunk small outline package (SSOP), and 32-pin small-outline integrated circuit (SOIC) packages
  • Pb-free and restriction of hazardous substances (RoHS) compliance

功能描述

The Cypress CY14B256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. 嵌入式非易失性组件通过采用量子井技术,打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环,而独立的非易失性数据则存储在高度可靠的量子井单元中。Data transfers from the SRAM to the nonvolatile elements (the  STORE operation) takes place automatically at power-down. On  power-up, data is restored to the SRAM (the RECALL operation)  from the nonvolatile memory. Both the STORE and RECALL  operations are also available under software control.  

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