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CY14C256PA, CY14B256PA, CY14E256PA: 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock | 赛普拉斯半导体

CY14C256PA, CY14B256PA, CY14E256PA: 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock

最近更新: 
2018 年 2 月 16 日
版本: 
*J

特性

  • 256-Kbit nonvolatile static random access memory (nvSRAM)
    • Internally organized as 32 K × 8
    • STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using SPI instruction (Software STORE) or HSB pin (Hardware STORE)
    • 在通电时启动(通电 RECALL)或者由 SPI 指令(软件 RECALL)启动数据恢复至 SRAM
    • 通过小型电容在断电时自动存储数据
  • 高可靠性
    • 无限的读、写和数据恢复循环
    • 1 百万次存储至量子井的循环
    • 数据保留时间:20 years at 85 °C
  • Real time clock (RTC)
    • Full-featured RTC
    • 看门狗定时器
    • 带可编程中断的时钟警报
    • Backup power fail indication
    • Square wave output with programmable frequency (1 Hz, 512 Hz, 4096 Hz, 32.768 kHz)
    • RTC 备用电容或电池
    • Backup current of 0.45 μA (typical)
  • 40 MHz and 104 MHz High-speed serial peripheral interface (SPI)
    • 40 MHz clock rate SPI write and read with zero cycle delay
    • 104 MHz clock rate SPI write and read (with special fast read instructions)
    • Supports SPI mode 0 (0,0) and mode 3 (1,1)
  • SPI access to special functions
    • Nonvolatile STORE/RECALL
    • 8-byte serial number
    • Manufacturer ID and Product ID
    • Sleep mode
  • Write protection
    • Hardware protection using Write Protect (WP) pin
    • Software protection using Write Disable instruction
    • Software block protection for 1/4, 1/2, or entire array
  • 低功耗
    • Average active current of 3 mA at 40 MHz operation
    • Average standby mode current of 250 μA
    • Sleep mode current of 8 μA
  • Industry standard configurations
    • Operating voltages:
      • CY14C256PA: VCC = 2.4 V to 2.6 V
      • CY14B256PA: VCC = 2.7 V to 3.6 V
      • CY14E256PA: VCC = 4.5 V to 5.5 V
    • 工业温度
    • 16-pin small outline integrated circuit (SOIC) package
    • Restriction of hazardous substances (RoHS) compliant

概述

The Cypress CY14X256PA combines a 256-Kbit nvSRAM with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. 该存储器采用“32 K 字,每字 32 位”的组织方式。嵌入式非易失性组件通过采用量子井技术,打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环,而量子井单元则能够提供高度可靠的非易失性数据存储空间。断电时,数据会从 SRAM 自动转移到非易失性元件中(“存储”操作)。On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instruction.