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CY14V101LA, CY14V101NA: 1-Mbit (128 K × 8/64 K × 16) nvSRAM | 赛普拉斯半导体

CY14V101LA, CY14V101NA: 1-Mbit (128 K × 8/64 K × 16) nvSRAM

最近更新: 
2020 年 6 月 26 日
版本: 
*K

1-Mbit (128 K × 8/64 K × 16) nvSRAM

特性

  • 25 ns 和 45 ns 访问时间
  • Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA)
  • 仅使用一个小电容器在断电时无需手动干预即可实现数据自动存储
  • 由软件、器件引脚或 AutoStore 在断电时启动数据存储至量子井非易失性组件
  • 由软件或通电操作启动数据恢复至 SRAM
  • 无限的读、写和数据恢复 循环
  • 1 百万次存储至量子井的循环
  • 20 年数据保留
  • Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
  • 工业温度
  • 48-ball fine pitch ball grid array (FBGA) package
  • Pb-free and restriction of hazardous substances (RoHS) compliance

功能描述

The Cypress CY14V101LA/CY14V101NA is a fast static RAM, with a non-volatile element in each memory cell. 该存储器采用“128 K 字节,每字节 8 位”或“64 K 字,每字 16 位”的组织方式。The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.

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