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CY14V101LA, CY14V101NA: 1-Mbit (128 K × 8/64 K × 16) nvSRAM | Cypress Semiconductor

CY14V101LA, CY14V101NA: 1-Mbit (128 K × 8/64 K × 16) nvSRAM

最近更新: 
2016 年 8 月 15 日
版本: 
*K

1-Mbit (128 K × 8/64 K × 16) nvSRAM

特性

  • 25 ns 和 45 ns 访问时间
  • Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA)
  • 仅使用一个小电容器在断电时无需手动干预即可实现数据自动存储
  • 由软件、器件引脚或 AutoStore 在断电时启动数据存储至量子井非易失性组件
  • 由软件或通电操作启动数据恢复至 SRAM
  • 无限的读、写和数据恢复 循环
  • 1 百万次存储至量子井的循环
  • 20 年数据保留
  • Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
  • 工业温度
  • 48-ball fine pitch ball grid array (FBGA) package
  • Pb-free and restriction of hazardous substances (RoHS) compliance

功能描述

The Cypress CY14V101LA/CY14V101NA is a fast static RAM, with a non-volatile element in each memory cell. 该存储器采用“128 K 字节,每字节 8 位”或“64 K 字,每字 16 位”的组织方式。The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

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