CY14V101Q3: 1 Mbit (128 K x 8) Serial SPI nvSRAM | 赛普拉斯半导体
CY14V101Q3: 1 Mbit (128 K x 8) Serial SPI nvSRAM
- 1-Mbit nonvolatile static random access memory (nvSRAM)
Internally organized as 128 K × 8
- 在断电时自动启动 (AutoStore) 或者由用户使用 HSB 引脚（硬件 STORE）或 SPI 指令（软件 STORE）启动数据存储至量子井非易失性组件
- 在通电时启动（通电 RECALL）或者由 SPI 指令（软件 RECALL）启动数据恢复至 SRAM
- 1 百万次存储至量子井的循环
- 数据保留时间：20 年
- High speed serial peripheral interface (SPI)
- 30 MHz clock rate
- Supports SPI mode 0 (0,0) and mode 3 (1,1)
- Write protection
- Hardware protection using Write Protect (WP) pin
- Software protection using Write Disable instruction
- Software block protection for 1/4,1/2, or entire array
- Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
- Average active current of 10 mA at 30 MHz operation
- Industry standard configurations
- 16-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant
The Cypress CY14V101Q3 combines a 1 Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. 该存储器采用“128 K 字，每字 128 位”的组织方式。嵌入式非易失性组件通过采用量子井技术，打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环，而量子井单元则能够提供高度可靠的非易失性数据存储空间。断电时，数据会从 SRAM 自动转移到非易失性元件中（“存储”操作）。On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). Both STORE and RECALL operations can also be initiated by the user through SPI instruction.
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