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CY14V104LA, CY14V104NA: 4 Mbit (512K x 8/256K x 16) nvSRAM | 赛普拉斯半导体

CY14V104LA, CY14V104NA: 4 Mbit (512K x 8/256K x 16) nvSRAM

最近更新: 
2020 年 6 月 26 日
版本: 
*H

4 Mbit (512K x 8/256K x 16) nvSRAM

特性

  • 25 ns 和 45 ns 访问时间
  • Internally organized as 512 K × 8 (CY14V104LA) or 256 K × 16 (CY14V104NA)
  • 只需一个小电容,即可在断电时实现自动存储
  • STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power-down
  • 可通过软件或加电触发回读至 SRAM
  • 无限的读、写和数据恢复 循环
  • 1-million STORE cycles to QuantumTrap
  • 20 年数据保留
  • Core VCC = 3.0 V to 3.6 V; IO VCCQ = 1.65 V to 1.95 V
  • 工业温度
  • 48-ball fine-pitch ball grid array (FBGA) package
  • Pb-free and restriction of hazardous substances (RoHS) compliance

功能描述

The Cypress CY14V104LA/CY14V104NA is a fast static RAM, with a non-volatile element in each memory cell. 该存储器采用“512 K 字节,每字节 8 位”或“256 K 字,每字 16 位”的组织方式。The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

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