CY14V116N: 16-Mbit (1024 K × 16) nvSRAM | 赛普拉斯半导体
CY14V116N: 16-Mbit (1024 K × 16) nvSRAM
16-Mbit (1024 K × 16) nvSRAM
- 16-Mbit nonvolatile static random access memory (nvSRAM)
- Sleep mode operation
- Operating voltage
- Industrial temperature: –40 °C 至 +85 °C
- 165-ball fine-pitch ball grid array (FBGA) package
- Restriction of hazardous substances (RoHS) compliant
- 如需更多信息，请参阅 PDF 文档。
The Cypress CY14V116N is a fast SRAM, with a nonvolatile element in each memory cell. 该存储器采用“1024 K 字，每字 1024 位”的组织方式。嵌入式非易失性组件通过采用量子井技术，打造出世界上最可靠的非易失性存储器。The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM.
Dear valued customer,
Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
For the full version of this message, please download the PDF version.