You are here

CY14V256LA: 256-Kbit (32 K x 8) nvSRAM | 赛普拉斯半导体

CY14V256LA: 256-Kbit (32 K x 8) nvSRAM

最近更新: 
2018 年 2 月 15 日
版本: 
*E

256-Kbit (32 K × 8) nvSRAM

特性

  • 35 ns access time
  • Internally organized as 32 K × 8
  • 仅使用一个小电容器在断电时无需手动干预即可实现数据自动存储
  • 由软件、器件引脚或 AutoStore 在断电时启动数据存储至量子井非易失性组件
  • 由软件或通电操作启动数据恢复至 SRAM
  • 无限的读、写和数据恢复 循环
  • 1 百万次存储至量子井的循环
  • 20 年数据保留
  • Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
  • 工业温度
  • 48-ball fine-pitch ball grid array (FBGA) package
  • Pb-free and restriction of hazardous substances (RoHS) compliance

功能描述

The Cypress CY14V256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. 嵌入式非易失性组件通过采用量子井技术,打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环,而独立的非易失性数据则存储在高度可靠的量子井单元中。Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

翻译文档仅作参考之用。我们建议您在参与设计开发时参考文档的英语版本。