CY14V256LA: 256-Kbit (32 K x 8) nvSRAM | 赛普拉斯半导体
CY14V256LA: 256-Kbit (32 K x 8) nvSRAM
256-Kbit (32 K × 8) nvSRAM
- 35 ns access time
- Internally organized as 32 K × 8
- 由软件、器件引脚或 AutoStore 在断电时启动数据存储至量子井非易失性组件
- 由软件或通电操作启动数据恢复至 SRAM
- 无限的读、写和数据恢复 循环
- 1 百万次存储至量子井的循环
- 20 年数据保留
- Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
- 48-ball fine-pitch ball grid array (FBGA) package
- Pb-free and restriction of hazardous substances (RoHS) compliance
The Cypress CY14V256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. 嵌入式非易失性组件通过采用量子井技术，打造出世界上最可靠的非易失性存储器。SRAM 能够实现无限次读写循环，而独立的非易失性数据则存储在高度可靠的量子井单元中。Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.
Dear valued customer,
Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
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