You are here

CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary) | 赛普拉斯半导体

CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary)

最近更新: 
2020 年 6 月 02 日
版本: 
*J

The CY15x104QSN is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other nonvolatile memories.

  • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K * 8
    • Virtually unlimited endurance of 100 trillion (1014) read/write cycles
    • 151-year data retention (See Data Retention and Endurance on page 77)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Single and multi I/O serial peripheral interface (SPI)
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
    • Serial bus interface SPI protocols
    • Extended I/O SPI protocols
    • Dual SPI (DPI) protocols
    • Quad SPI (QPI) protocols
  • SPI clock frequency
    • Up to 108-MHz frequency SPI Single Data Rate (SDR)
    • Up to 54-MHz frequency SPI Double Data Rate (DDR)
  • Execute-in-place (XIP)
    • Write protection, data security, and data integrity
    • Hardware protection using the Write Protect (WP) pin
    • Software block protection
  • Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
    • ECC detects and corrects 1-bit error. In case 2-bit error occurs, it doesn’t correct but reports through ECC Status register
    • CRC detects any accidental change to raw data
  • Extended electronic signatures
    • Device ID includes manufacturer ID and product ID
    • Unique ID
    • User writable Serial Number
  • Dedicated 256-byte special sector F-RAM
    • Dedicated special sector write and read
    • Content can survive up to three standard reflow cycles
  • Low-power consumption at high speed
    • 5 mA (typ) active current for 108 MHz SPI SDR
    • 13 mA (typ) active current for 108 MHz QSPI SDR and 54 MHz QSPI DDR
    • 158 μA (typ) standby current
    • 0.75 μA (typ) deep power down mode current
    • 0.1 μA (typ) hibernate mode current
  • Low-voltage operation:
    • CY15V104QSN: VDD = 1.71 V to 1.89 V
    • CY15B104QSN: VDD = 1.8 V to 3.6 V
  • Operating temperature: -40 ℃ to +85 ℃
  • Packages
    • 8-pin Small Outline Integrated Circuit (SOIC) package
    • 8-pin Grid-Array Quad Flat No-Lead (GQFN) package
  • Restriction of hazardous substances (RoHS) compliant

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.

翻译文档仅作参考之用。我们建议您在参与设计开发时参考文档的英语版本。