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CY62126ESL: 1-Mbit (64 K x 16) Static RAM | 赛普拉斯半导体

CY62126ESL: 1-Mbit (64 K x 16) Static RAM

2018 年 1 月 29 日

1-Mbit (64 K x 16) Static RAM


  • Very high speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 4 μA
  • Ultra low active power
    • Typical active current: 1.3 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-Pin thin small outline package (TSOP) II package


The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.