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CY62136ESL MoBL®: 2-Mbit (128 K × 16) Static RAM | 赛普拉斯半导体

CY62136ESL MoBL®: 2-Mbit (128 K × 16) Static RAM

最近更新: 
2017 年 11 月 30 日
版本: 
*L

2-Mbit (128 K × 16) Static RAM

特性

  • Very high speed: 45 ns
  • Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package
     

功能描述

The CY62136ESL is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling.