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CY62147EV18: 4-Mbit (256K x 16) Static RAM | 赛普拉斯半导体

CY62147EV18: 4-Mbit (256K x 16) Static RAM

2015 年 11 月 29 日

4-Mbit (256K x 16) Static RAM


  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V 至 2.25 V
  • Pin compatible with CY62147DV18
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Ultra low standby power
  • 如需更多信息,请参阅 PDF 文档


The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).