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CY62157E: 8-Mbit (512K x 16) Static RAM | 赛普拉斯半导体

CY62157E: 8-Mbit (512K x 16) Static RAM

2017 年 11 月 14 日

8-Mbit (512K x 16) Static RAM


  • Very high speed: 45 ns
    • Industrial: –40°C to 85°C
    • Automotive-E: –40°C to 125°C
  • Wide voltage range: 4.5V–5.5V
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA (Industrial)
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • 如需更多信息,请参阅 PDF 文档


The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.