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CY62157E: 8-Mbit (512K x 16) Static RAM | 赛普拉斯半导体

CY62157E: 8-Mbit (512K x 16) Static RAM

最近更新: 
2017 年 11 月 14 日
版本: 
*N

8-Mbit (512K x 16) Static RAM

特性

  • Very high speed: 45 ns
    • Industrial: –40°C to 85°C
    • Automotive-E: –40°C to 125°C
  • Wide voltage range: 4.5V–5.5V
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA (Industrial)
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • 如需更多信息,请参阅 PDF 文档
     

功能描述

The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.