You are here

CY62167EV18 MoBL®: 16-Mbit (1 M × 16) Static RAM | 赛普拉斯半导体

CY62167EV18 MoBL®: 16-Mbit (1 M × 16) Static RAM

2015 年 8 月 19 日

16-Mbit (1 M × 16) Static RAM


  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V 至 2.25 V
  • Ultra low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power down when deselected
  • CMOS for optimum speed and power
  • Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages


The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).