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CY62168EV30 MoBL®, 16-Mbit (2M x 8) Static RAM | 赛普拉斯半导体

CY62168EV30 MoBL®, 16-Mbit (2M x 8) Static RAM

2020 年 5 月 28 日

16-Mbit (2 M × 8) Static RAM


  • Very high speed: 45 ns
  • Wide voltage range: 2.20 V 至 3.60 V
  • Ultra low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Offered in Pb-free 48-ball FBGA package.


The CY62168EV30 is a high performance CMOS static RAM organized as 2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.