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CY7C1020CV26: 512-Kbit (32 K × 16) Static RAM | 赛普拉斯半导体

CY7C1020CV26: 512-Kbit (32 K × 16) Static RAM

最近更新: 
2020 年 6 月 26 日
版本: 
*G

512-Kbit (32 K × 16) Static RAM

特性

  • Temperature range
    • Automotive: –40°C to 125°C
  • High speed
    • tAA = 15 ns
  • Optimized voltage range: 2.5V to 2.7V
  • Automatic power down when deselected
  • Independent control of upper and lower bits
  • CMOS for optimum speed and power
  • Package offered: 44-pin TSOP II

     

功能描述

The CY7C1020CV26 is a high performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected.  Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14).

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