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CY7C1049BN: 512 K × 8 Static RAM | 赛普拉斯半导体

CY7C1049BN: 512 K × 8 Static RAM

最近更新: 
2018 年 1 月 29 日
版本: 
*D

512 K × 8 Static RAM

特性

  • High speed
    • tAA = 17 ns
  • Low active power
    • 1073 mW (max.)
  • Low CMOS standby power
    • 2.75 mW (max.)
  • 2.0 V data retention (400 μW at 2.0 V retention)
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • 如需更多信息,请参阅 PDF 文档。

功能描述

The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.