CY7C1148KV18, CY7C1150KV18: 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) | 赛普拉斯半导体
CY7C1148KV18, CY7C1150KV18: 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)
- 18 Mbit density (1 M x 18, 512 K x 36)
- 450-MHz clock for high bandwidth
- 2 字突发降低地址总线频率
- 双数据速率 (DDR) 接口（数据传输速率 900 MHz），工作频率 450 MHz
- 可提供 2.0 时钟周期延迟
- 如需更多信息，请参阅 PDF 文档
The CY7C1148KV18, and CY7C1150KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II+ architecture. DDR II+ 包含一个带有先进同步外围电路的 SRAM 内核。用于读和写的地址被锁止在输入 (K) 时钟的备选上升沿。Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 18-bit words (CY7C1148KV18), or 36-bit words (CY7C1150KV18) that burst sequentially into or out of the device.
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Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
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