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CY7C1345G: 4-Mbit (128 K × 36) Flow-Through Sync SRAM | 赛普拉斯半导体

CY7C1345G: 4-Mbit (128 K × 36) Flow-Through Sync SRAM

最近更新: 
2016 年 11 月 21 日
版本: 
*P

4-Mbit (128 K × 36) Flow-Through Sync SRAM

特性

  • 128 K × 36 common I/O
  • 3.3 V core power supply (VDD)
  • 2.5 V or 3.3 V I/O supply (VDDQ)
  • Fast clock-to-output times
    • 8.0 ns (100 MHz version)
  • Provide high performance 2-1-1-1 access rate
  • User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences
  • Separate processor and controller address strobes
  • Synchronous self timed write
  • Asynchronous output enable
  • Available in Pb-free 100-pin TQFP package
  • ZZ sleep mode option
     

功能描述

The CY7C1345G is a 128 K × 36 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. The maximum access delay from clock rise is 8.0 ns (100 MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive edge triggered Clock Input (CLK).

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