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CY7C1399BN: 256-Kbit (32 K × 8) Static RAM | 赛普拉斯半导体

CY7C1399BN: 256-Kbit (32 K × 8) Static RAM

2018 年 1 月 29 日

256-Kbit (32 K × 8) Static RAM


  • Temperature Ranges
    • Industrial: –40°C to 85°C
    • Commercial: 0 °C to 70 °C
    • Automotive-A: –40°C to 85°C
  • Single 3.3 V power supply
  • Ideal for low-voltage cache memory applications
  • High speed: 12 ns
  • Low active power
    • 180 mW (max.)
  • Low-power alpha immune 6T cell
  • Available in Pb-free and non Pb-free Plastic SOJ and TSOP I packages


The CY7C1399BN is a high-performance 3.3 V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tristate drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.

An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14).

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

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