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CY7C1521KV18, 72-Mbit DDR II SRAM Four-Word Burst Architecture | 赛普拉斯半导体

CY7C1521KV18, 72-Mbit DDR II SRAM Four-Word Burst Architecture

2017 年 11 月 30 日

72-Mbit DDR II SRAM Four-Word Burst Architecture


  • 72-Mbit 密度 (2 M × 36)
  • 250 MHz 时钟实现高带宽
  • 4 字突发降低地址总线频率
  • 双数据速率 (DDR) 接口(数据传输速率 500 MHz),工作频率 250 MHz
  • 两个输入时钟(K 和 K)用于精确 DDR 定时
    • SRAM 仅使用上升沿
  • 两个输入时钟用于输出数据(C 和 C),以将时钟偏移和飞行时间的不匹配降至最低
  • 回波时钟(CQ 和 CQ)简化高速系统中的数据采集
  • 同步内部自定时写入
  • 如需更多信息,请参阅 PDF 文档。


The CY7C1521KV18 is 1.8 V Synchronous Pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a two-bit burst counter. 用于读和写的地址被锁止在输入 (K) 时钟的备选上升沿。Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.