You are here

CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR™-IV XP SRAM | 赛普拉斯半导体

CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR™-IV XP SRAM

最近更新: 
2017 年 5 月 3 日
版本: 
*Q

144-Mbit QDR™-IV XP SRAM

特性

  • 144-Mbit density (8 M × 18, 4 M × 36)
  • Total Random Transaction Rate of 2132 MT/s
  • Maximum operating frequency of 1066 MHz
  • Read latency of 8.0 clock cycles and write latency of 5.0 clock cycles
  • Eight-bank architecture enables one access per bank per cycle
  • Two-word burst on all accesses
  • Dual independent bidirectional data ports
  • Single address port used to control both data ports
  • Single data rate (SDR) control signaling
  • 如需更多信息,请参阅 PDF 文档

 

功能描述

The QDR-IV XP (Xtreme Performance) SRAM is a high-performance memory device optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports.

 

翻译文档仅作参考之用。我们建议您在参与设计开发时参考文档的英语版本。