CYRS1049DV33: 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology | 赛普拉斯半导体
CYRS1049DV33: 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology
The CYRS1049DV33 is a high-performance complementary metal oxide semiconductor (CMOS) static RAM organized as 512 K words by 8 bits with RadStop™ technology. Cypress’s state-of-the-art RadStop technology is radiation hardened through proprietary design and process hardening techniques. The 4-Mbit fast asynchronous SRAM with RadStop technology is also QML V certified with Defense Logistics Agency Land and Maritime (DLAM).
4-Mbit (512 K × 8) Static RAM with RadStop™ Technology
- Temperature ranges
- Military/Space: -55 °C to 125 °C
- High speed
- tAA = 12 ns
- Low active power
- ICC = 95 mA at 12 ns (PMAX = 315 mW)
- Low CMOS standby power
- ISB2 = 15 mA
- 2.0 V data retention
- Automatic power-down when deselected
- Transistor-transistor logic (TTL) compatible inputs and outputs
- Easy memory expansion with CE and OE features
- Available in Pb-free 36-pin ceramic flat package
Dear valued customer,
Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
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