FM24CL64B: 64-Kbit (8 K × 8) Serial (I2C) Automotive F-RAM | 赛普拉斯半导体
FM24CL64B: 64-Kbit (8 K × 8) Serial (I2C) Automotive F-RAM
最近更新：
2015 年 10 月 07 日
版本：
*F
64-Kbit (8 K × 8) Serial (I2C) Automotive F-RAM
特性
- 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8
- Fast 2-wire Serial interface (I2C)
- 低功耗
- Voltage operation: VDD = 3.0 V to 3.6 V
- Automotive-E temperature: -40 °C 至 +125 °C
- 8-pin small outline integrated circuit (SOIC) package
- AEC Q100 Grade 1 compliant
- Restriction of hazardous substances (RoHS) compliant
- 如需更多信息，请参阅 PDF 文档
功能概述
The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
翻译文档仅作参考之用。我们建议您在参与设计开发时参考文档的英语版本。
相关文件
| 文件标题 | 语言 | Size | 最近更新 |
|---|---|---|---|
 FM24CL64B 64-Kbit (8 K × 8) Serial (I2C) Automotive F-RAM Datasheet.pdf |
英语 | 465.75 KB | 2015 年 10 月 07 日 |
|
FM24CL64B 64-Kbit (8 K × 8) Serial (I2C) Automotive F-RAM Datasheet (Chinese).pdf |
中文 | 560.83 KB | 2015 年 10 月 07 日 |
|
FM24CL64B 64-Kbit (8 K × 8) Serial (I2C) Automotive F-RAM Datasheet(Japanese).pdf |
日语 | 598.98 KB | 2015 年 10 月 07 日 |
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