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FM24V01A, 128-KBIT (16K X 8) SERIAL (I2C) F-RAM | 赛普拉斯半导体

FM24V01A, 128-KBIT (16K X 8) SERIAL (I2C) F-RAM

最近更新: 
2019 年 1 月 10 日
版本: 
*K

128-Kbit (16K × 8) Serial (I2C) F-RAM

  • 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
    • High-endurance 100 trillion (1014) read/writes
    • 151-year data retention (See the Data Retention and Endurance table)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Fast two-wire serial interface (I2C)
    • Up to 3.4-MHz frequency
    • Direct hardware replacement for serial EEPROM
    • Supports legacy timings for 100 kHz and 400 kHz
  • Device ID
    • Manufacturer ID and Product ID
  • 低功耗
    • 175-μA active current at 100 kHz
    • 150-μA standby current
    • 8-μA sleep mode current
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C 至 +85 °C
  • 8-pin small outline integrated circuit (SOIC) package
  • Restriction of hazardous substances (RoHS) compliant
  • 如需更多信息,请参阅 PDF 文档。

功能概述



The FM24V01A is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.

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