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FM25C160B: 16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM | 赛普拉斯半导体

FM25C160B: 16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM

最近更新: 
2015 年 10 月 07 日
版本: 
*C

16-Kbit (2 K × 8) Serial (SPI) Automotive F-RAM

特性

  • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • 低功耗
  • Voltage operation: VDD = 4.5 V to 5.5 V
  • Automotive-E temperature: –40 °C 至 +125 °C
  • 8-pin small outline integrated circuit (SOIC) package
  • AEC Q100 Grade 1 compliant
  • Restriction of hazardous substances (RoHS) compliant
  • 如需更多信息,请参阅 PDF 文档。

 

功能概述

 

The FM25C160B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

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