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FM25L04B (Automotive): 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM | 赛普拉斯半导体

FM25L04B (Automotive): 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM

最近更新: 
2020 年 11 月 10 日
版本: 
*E

4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM

特性

  • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • 低功耗
  • Low-voltage operation: VDD = 3.0 V to 3.6 V
  • Automotive-E temperature: –40 °C 至 +125 °C
  • 8-pin small outline integrated circuit (SOIC) package
  • AEC Q100 Grade 1 compliant
  • Restriction of hazardous substances (RoHS) compliant
  • 如需更多信息,请参阅 PDF 文档。

 

功能概述

 

The FM25L04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

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