FM25V02A, 256-Kbit (32K × 8) Serial (SPI) F-RAM

256-Kbit (32K × 8) Serial (SPI) F-RAM

特性

• 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
  
  • High-endurance 100 trillion (10¹⁴) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
  
  • Up to 40-MHz frequency
  • Direct hardware replacement for serial flash and EEPROM
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write-protection scheme
  
  • Hardware protection using the Write Protect (WP) pin
  • Software protection using Write Disable instruction
  • Software block protection for 1/4, 1/2, or entire array
• Device ID
  
  • Manufacturer ID and Product ID
• 低功耗
  
  • 2.5-mA active current at 40 MHz
  • 150-μA standby current
  • 8-μA sleep mode current
• Low-voltage operation: VDD = 2.0 V to 3.6 V
• Industrial temperature: –40 °C 至 +85 °C
• Packages
  
  • 8-pin small outline integrated circuit (SOIC) package
  • 8-pin thin dual flat no leads (DFN) package
• Restriction of hazardous substances (RoHS) compliant
• 如需更多信息，请参阅 PDF 文档。

功能概述

The FM25V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.