You are here

FM25V20A: 2-Mbit (256 K × 8) Serial (SPI) F-RAM with Extended Temperature | 赛普拉斯半导体

FM25V20A: 2-Mbit (256 K × 8) Serial (SPI) F-RAM with Extended Temperature

最近更新: 
2019 年 12 月 18 日
版本: 
*F

2-Mbit (256 K × 8) Serial (SPI) F-RAM with Extended Temperature
特性

  • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Device ID
  • 低功耗
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Extended temperature: –40 °C 至 +105 °C
  • 8-pin thin dual flat no leads (TDFN) package
  • Restriction of hazardous substances (RoHS) compliant
  • 如需更多信息,请参阅 PDF 文档。

功能概述

The FM25V20A is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.