S25FL128P, 128-MBIT, 3.0 V FLASH MEMORY | 赛普拉斯半导体
S25FL128P, 128-MBIT, 3.0 V FLASH MEMORY
The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.
Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and regulated voltages are provided for the program operations. This device requires a high voltage supply to WP#/ACC pin for the Accelerated Programming mode.