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PCN061113 | 赛普拉斯半导体


2018 年 5 月 29 日

1M MoBLTM SRAM Process Technology Transition from R8NLD-18 (0.13 micron) to R95LD-3R(90-nanometer), Lead-free (RoHS compliant) packages on 32 pin SOIC (Small-Outline Integrated Circuit), 32 pin TSOP I (Thin Shrink Outline package), 44 pin TSOPII (Thin Shrink Outline Package),32 pin STSOP I (Small Thin Shrink Outline Package) and 48 ball VFBGA (Very fine Ball Grid Array) respectively

Issue Date: 2006 年 5 月 18 日
Effectivity Date: 2006 年 5 月 8 日