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Energy Comparison of Cypress F-RAM and EEPROM | 赛普拉斯半导体

Energy Comparison of Cypress F-RAM and EEPROM

最近更新: 
2020 年 5 月 29 日
版本: 
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F-RAM (Ferroelectric Random Access Memory) is a nonvolatile memory that uses a ferroelectric capacitor to store data. It offers higher write speeds and lower energy consumption than flash/EEPROM.

This white paper compares the energy consumption of the Cypress F-RAM and EEPROM under typical application scenarios.