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PowerSnooze IoT SRAM | 赛普拉斯半导体

PowerSnooze IoT SRAM

The SRAM’s manufactured on the state-of-the-art 65-nm technology are offered with a “Power Snooze” feature – that lets you operate at fast speeds of 10ns (100 MHz), while consuming < 2 uA / Mbit (typ.) of sleep current. By invoking this “deep sleep” feature of these SRAM’s, you can quickly transition from a high speed active state to a power saving sleep state. This feature makes these SRAM’s ideal for battery backed industrial applications and high performance IoT systems, where the emphasis is on completing the task quickly, and with minimal power consumption. This feature allows the full power of your MCU to be harnessed, since the SRAM is no longer the limitation to achieving your peak performance.

部件 

部件编号 Product Status Density Access Time 封装 Temperature Range 数据手册
CY7S1041G For New Designs, Production 4 Mbit 10ns 48-ball BGA (6x8 mm, 5x5 ball)
44-pin SOJ, 44-pin TSOP-II
Industrial, -40C to +85C 数据手册
CY7S1049G For New Designs, Production 4 Mbit 10ns 36-pin SOJ Industrial, -40C to +85C
 
数据手册
CY7S1061G For New Designs, Production 16 Mbit 10ns 48-ball BGA
48-pin TSOP-I
54-pin TSOP-II
Industrial, -40C to +85C
 
数据手册

应用手册

AN89371 - Power Saving With Cypress’s 65-nm Asynchronous PowerSnooze™ SRAM 

 

文章

Bridging the gap between speed and power in Asynchronous SRAMs

The role of SRAMs in nextgen IoT and wearable embedded designs