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SRAM Memory | 赛普拉斯半导体

SRAM Memory

Static Random Access Memory (SRAM)

Static Random Access Memory (SRAM)

Cypress’ stand-alone SRAM is a random-access memory that offers you an easy way to add more RAM to your applications. Cypress offers a wide variety of High-speed, Low-power and reliable SRAMs for a broad variety of applications such as Networking, Automotive, Consumer electronics, Industrial, Medical, Aerospace and Defense. With a diversified portfolio of Asynchronous, Synchronous and Dual-port SRAMs and a commitment of stable supply and long-term product support, Infineon is a preferred SRAM supplier. These devices are available in densities ranging from 256 Kbit to 64 Mbit with on-chip ECC. Cypress also supports high-reliability, radiation tolerant products for mission critical applications.

Asynchronous | Synchronous

  • 256kb – 64Mb
  • 2Mb – 144Mb
  • networking devices, LAN interfaces, Routers
  • SRAMs are used in applications such as POS equipment’s, Multi-function printers
  • Cypress's Synchronous SRAM is used in Computed Tomography (CT), Positron Emission Tomography (PET), and Ultrasound medical imaging systems.
  • Cypress's RadStop QDR SRAMs provides the industry's highest bandwidth enabling space systems to transfer large amounts of payload.
  • Cypress' QDR SRAMs are used in packer buffers, Queue management and packet processing in communication devices.
  • SRAMs are used in automotive ECU, Body electronics

Long History

Long History

Billions of products shipped with nearly 40 years of experience

Broad Portfolio

Broad Portfolio

Diversified portfolio of asynchronous, synchronous and dual-port SRAMs

Stable supply

Stable supply

Short lead times with multiple qualified fabs, assembly & test sites

Long term support

Long term support

Legacy parts support of up to 20 years

 

Cypress’ SRAM Family

Cypress’ Asynchronous SRAM memory products are classified into two families based on their access time:

  • Low-power Asynchronous SRAMs: These are devices that typically operate in the 45-ns and slower speed range. These SRAMs are typically designed to consume very low power and are used in applications where power is a major concern. They are often used for temporary data storage and scratch pad applications. Cypress’ MoBL® Micropower Asynchronous SRAMs belong to this family.
  • Fast Asynchronous SRAMs: These are devices that typically operate in the sub–25 ns region. They are often used in buffer and cache memory applications. Cypress offers Fast SRAMs with PowerSnooze™ to offer devices that combines the access time of Fast Asynchronous SRAM with a unique ultra-low-power sleep mode

 

Cypress’ Synchronous SRAM memory products are classified based on the data transfer rates:

  • Single Data Rate SRAMs: These are synchronous SRAMs where one word of data is transferred between the SRAMs and the controller in a given clock cycle. These include Cypress’ Pipelined SRAMs, Flowthrough SRAMs, Burst SRAMs and Network SRAMs – NoBL™/ZBT™ SRAMs
  • Double & Quad Data Rate SRAMs: These SRAMs can transfer multiple data words in a given cycle. These SRAMs are designed to be the SRAMs of choice for networking applications with high data rate requirements. QDR (Quad Data Rate™) and DDR (Double Data Rate) SRAMs belong to this family.

 

Why Cypress’ SRAM?

With On-Chip Hardware ECC (Error Correction Code), Cypress’ SRAMs perform all ECC related functions in line, without intervention. Higher energy extra-terrestrial radiation can flip multiple adjacent bits, leading to multi-bit errors. The single-bit error detection and correction capability of ECC is supplemented by a bit-interleaving scheme to prevent the occurrence of multi-bit errors. Together, these features provide significant improvement in Soft Error Rate (SER) performance, resulting in industry leading FIT rates of less than 0.1 FIT/Mbit.

SRAM ECC

 

SRAM architecture

SRAM uses a flip-flop based latching circuitry to store each bit. Nearly all SRAMs either use a 4-Transistor or a 6-Transistor memory cell. These cell structures allow data to be stored for an indefinite amount of time in the device as long as it is powered.

The image on the right shows a 6 transistor SRAM cell. Each bit is stored on four transistors that form two cross-coupled inverters. Two additional access transistors serve to control the access to a storage cell during read and write operations.

SRAMs come in two different flavors: Synchronous and Asynchronous. Synchronous SRAMs are devices that are synchronized with an external signal called a clock. The device will read and write information into the memory only on particular states of the clock. An asynchronous SRAM, on the other hand, does not depend on the state of a clock. It will begin to read or write information into the memory as soon as it receives the instruction to do so.

SRAM architecture

To know more about Cypress’s SRAM memories, read this application note.

SRAM vs DRAM

SRAMs don’t require period refresh like DRAMs, hence offer better performance. A DRAM cell is composed of an access transistor and a capacitor. Data is stored in the capacitor as electrical charge, but the electrical charge leaks over time. Therefore, DRAM must be refreshed periodically to preserve the stored data. The refresh negatively impacts DRAM performance and power dissipation. Due to this, SRAMs are also typically faster and have lower power consumption than DRAMs.

Feature SRAM pSRAM DRAM
Power Low Medium High
Throughput High Low-Medium Medium-High
Access Time Low High High
接口 Simple Simple Complex

About Infineon RAM Memory Solutions

With close to 4 decades of leadership in the memory business, Infineon offers a broad portfolio of volatile and non-volatile memories. Our volatile memory offerings include Synchronous and Asynchronous SRAMs for the lower densities and HyperRAMs for the higher densities. Our non-volatile portfolio includes F-RAM and nvSRAM products.

Infineon Products

Asynchronous static random access memory (Async SRAM)

Cypress’s asynchronous SRAMs include low power More Batter Life (MoBL®) micropower SRAMs and Fast SRAMs. Also included are products with on chip Error Correction Code (ECC). 了解更多.

Fast Async SRAMs
Fastest access time of 10ns
Density:
256Kb – 32Mb
工作电压:
1.8V, 3V, 5V
Data width:
x8, x16, x32
Access time:
10, 15ns
Temperature Grade:

工业

商用

汽车

Micropower Async SRAMs
More Battery Life
Density:
256Kb – 64Mb
工作电压:
1.8V, 3V, 5V
Data width:
x8, x16
Access time:
45 - 55ns
Temperature Grade:

工业

商用

汽车

SRAM with ECC
SRAM with On-chip hardware ECC
Density:
4Mb – 16Mb
工作电压:
1.8V, 3V, 5V
Data width:
x8, x16, x32
Access time:
10 - 45ns
Temperature Grade:

工业

商用

汽车

Synchronous static random-access memory (Sync SRAM)

Cypress’s high-speed synchronous SRAMs include standard synchronous pipelined, No Bus Latency™ (NoBL™), Quad Data Rate (QDR), and Double Data Rate (DDR) SRAMs. 了解更多.

Standard Sync SRAMs
With On-chip ECC
Density:
2Mb - 72Mb
Core Voltage:
2.5V, 3.3V
Data width:
x18, x32, x36, x72
Random Transaction Rate:
250 MT/s
Maximum bandwidth:
18 Gbps
On-Chip ECC:
Temperature Grade:

工业

商用

NoBL Sync SRAMs
No Bus Latency for High speed applications
Density:
4Mb - 72Mb
Core Voltage:
2.5V, 3.3V
Data width:
x18, x32, x72
Random Transaction Rate:
250 MT/s
Maximum bandwidth:
18 Gbps
On-Chip ECC:
Temperature Grade:

工业

商用

DDR Sync SRAMs
With Max RTR of 666MT/s
Density:
18Mb - 144Mb
Core Voltage:
1.8V
Data width:
x8, x9, x18, x36
Random Transaction Rate:
666 MT/s
Maximum bandwidth:
47.9 Gbps
On-Chip ECC:
Temperature Grade:

工业

商用

QDR-II+ SRAMs
With On-die termination
Density:
36Mb - 72Mb
Core Voltage:
1.8V
Data width:
x18, x32, x36, x72
Random Transaction Rate:
666 MT/s
Maximum bandwidth:
79.2 Gbps
On-die termination:
Temperature Grade:

工业

商用

QDR-II+ Xtreme
With On-die termination
Density:
36Mb - 72Mb
Core Voltage:
1.8V
Data width:
x18, x36
Random Transaction Rate:
900 MT/s
Maximum bandwidth:
91.1 Gbps
On-die termination:
Temperature Grade:

工业

商用

QDR-IV
With On-die termination & On-chip ECC
Density:
72Mb - 144Mb
Core Voltage:
1.3V
Data width:
x18, x36
Random Transaction Rate:
2132 MT/s
Maximum bandwidth:
153.3 Gbps
On-die termination:
Temperature Grade:

工业

商用

High-Reliability and Radiation-hardened SRAM memories

Cypress also offers radiation-hardened SRAM products for Aerospace and Defense applications. The Cypress Radiation-Hardened Quad Data Rate and Fast Asynchronous SRAM memories are the fastest space-qualified SRAM memories equipped with numerous features that are engineered to satisfy the needs of today's advanced space systems and beyond. Learn More.